Purdue University Develops High-Q Toroidal Inductors for Next-Gen RF Circuits

Researchers at Purdue University have unveiled a new generation of toroidal inductors with exceptional performance for high-frequency applications, according to a recent dissertation published in Purdue e-Pubs. The team, led by electrical engineering professor Mohammadi, developed a 62-turn toroidal inductor on a high-resistivity silicon substrate that achieves an inductance value of 81.4 nH and a peak quality factor (Q) of 9.7. Complementary toroidal transformers with turn ratios of 8:8, 14:14, and 30:30 demonstrated coupling coefficients exceeding 0.8 and self-resonant frequencies up to 15 GHz. These advancements address critical needs in RF and microwave integrated circuits, offering improved power loss reduction, noise suppression, and phase stability. The toroidal inductors’ compact design and high-frequency efficiency are expected to enable innovations in 5G infrastructure, satellite communications, and advanced radar systems, where minimizing electromagnetic interference (EMI) and maximizing power density are paramount.



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